A Comparative Study of 6T, 8T and 9T SRAM Cell
نویسندگان
چکیده
From the last few decades, the scaling down of CMOS devices have been taking place to achieve better performance in terms of speed, power dissipation, size and reliability. The major area of concern in today‟s CMOS technology is Data retention and leakage current reduction. SRAM (Static Random Access Memory) is memory used to store data. Conventional Static Random Access Memory (SRAM) cells suffer from an intrinsic data instability problem due to directly-accessed data storage nodes during a read operation. Noise margins of memory cells further shrink with increasing variability and decreasing power supply voltage in scaled CMOS technologies. The comparison of different SRAM cell on the basis of different performance metrics like Read delay, Write delay, Power dissipation, noise margin, area is done in this review paper.
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